Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates
The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing the ternary substrates, the material gains were found as ~ 3-5 times higher than that of conventional method with reduced wa...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6463418/ |