Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN...

Full description

Bibliographic Details
Main Authors: Mahdi Gholampour, Amir Abdollah-zadeh, Leila Shekari, Reza Poursalehi, mahdi soltanzadeh
Format: Article
Language:English
Published: Islamic Azad University, Marvdasht Branch 2018-01-01
Series:Journal of Optoelectronical Nanostructures
Subjects:
Online Access:https://jopn.marvdasht.iau.ir/article_2823_3e3fa0f6040777b4be9e2316afbfbeb9.pdf