Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the b...

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Bibliographic Details
Main Authors: Maodan Ma, Yanrong Cao, Hanghang Lv, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Micromachines
Subjects:
AlGaN/GaN HEMTs
acceptor traps
Silvaco TCAD
breakdown voltage
leakage current
additional electric field
Online Access:https://www.mdpi.com/2072-666X/14/1/79

Internet

https://www.mdpi.com/2072-666X/14/1/79

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