P-type Inversion at the Surface of β-Ga<sub>2</sub>O<sub>3</sub> Epitaxial Layer Modified with Au Nanoparticles

P-type Inversion at the Surface of β-Ga<sub>2</sub>O<sub>3</sub> Epitaxial Layer Modified with Au Nanoparticles

The electric properties and chemical and thermal stability of gallium oxide β-Ga<sub>2</sub>O<sub>3</sub> make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga<sub>2</sub>O<su...

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Bibliographic Details
Main Authors: Maciej Krawczyk, Ryszard Korbutowicz, Rafał Szukiewicz, Patrycja Suchorska-Woźniak, Maciej Kuchowicz, Helena Teterycz
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Sensors
Subjects:
semiconducting metal oxide
gas sensors
thin film
Online Access:https://www.mdpi.com/1424-8220/22/3/932

Internet

https://www.mdpi.com/1424-8220/22/3/932

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