Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory
Since the most of three dimensional (3D) NAND devices’ channel is composed of polysilicon grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape. In this study, we defined the curvature of the channel as a ‘Wave Factor (WF)’ parameter, and sim...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9912418/ |