Annealing Stability of NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Heterojunction Rectifiers
The stability of vertical geometry NiO/Ga<sub>2</sub>O<sub>3</sub> rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The devices...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-07-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/8/1174 |