High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-&#x03BC;m gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at V<sub>GS</sub> = V<sub>D...

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Bibliographic Details
Main Authors: Zeyang Ren, Wanjiao Chen, Jinfeng Zhang, Jincheng Zhang, Chunfu Zhang, Guansheng Yuan, Kai Su, Zhiyu Lin, Yue Hao
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Single crystalline diamond
normally-off
MOSFET
Online Access:https://ieeexplore.ieee.org/document/8531777/

Internet

https://ieeexplore.ieee.org/document/8531777/

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