High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at V<sub>GS</sub> = V<sub>D...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8531777/ |
| _version_ | 1818411662558887936 |
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| author | Zeyang Ren Wanjiao Chen Jinfeng Zhang Jincheng Zhang Chunfu Zhang Guansheng Yuan Kai Su Zhiyu Lin Yue Hao |
| author_facet | Zeyang Ren Wanjiao Chen Jinfeng Zhang Jincheng Zhang Chunfu Zhang Guansheng Yuan Kai Su Zhiyu Lin Yue Hao |
| author_sort | Zeyang Ren |
| collection | DOAJ |
| description | High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at V<sub>GS</sub> = V<sub>DS</sub> = -4.5 V and an on-resistance of 65.39 Ω·mm. The transconductance keeps increasing when V<sub>GS</sub> shifts from VTH toward more negative direction, and reaches the record high value of 20 mS/mm at V<sub>GS</sub> of -4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of -4 V <; V<sub>GS</sub> <; -2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric. |
| first_indexed | 2024-12-14T10:34:59Z |
| format | Article |
| id | doaj.art-4ce5a38efa9f49b9b0b42eb9e2a31cec |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T10:34:59Z |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-4ce5a38efa9f49b9b0b42eb9e2a31cec2022-12-21T23:05:59ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-017828710.1109/JEDS.2018.28800058531777High Performance Single Crystalline Diamond Normally-Off Field Effect TransistorsZeyang Ren0https://orcid.org/0000-0002-5503-7228Wanjiao Chen1Jinfeng Zhang2Jincheng Zhang3https://orcid.org/0000-0001-7332-6704Chunfu Zhang4https://orcid.org/0000-0001-9555-3377Guansheng Yuan5Kai Su6Zhiyu Lin7Yue Hao8State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, ChinaHigh performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at V<sub>GS</sub> = V<sub>DS</sub> = -4.5 V and an on-resistance of 65.39 Ω·mm. The transconductance keeps increasing when V<sub>GS</sub> shifts from VTH toward more negative direction, and reaches the record high value of 20 mS/mm at V<sub>GS</sub> of -4.5 V, which benefitted from the almost constant mobility of the holes in the gate voltage range of -4 V <; V<sub>GS</sub> <; -2 V. The critical device process to realize these low on-resistance normally-off MOSFETs consists of 2-min UV ozone treatment of the H-diamond surface and thermal oxidation of aluminum film in the air to form an alumina gate dielectric.https://ieeexplore.ieee.org/document/8531777/Single crystalline diamondnormally-offMOSFET |
| spellingShingle | Zeyang Ren Wanjiao Chen Jinfeng Zhang Jincheng Zhang Chunfu Zhang Guansheng Yuan Kai Su Zhiyu Lin Yue Hao High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors IEEE Journal of the Electron Devices Society Single crystalline diamond normally-off MOSFET |
| title | High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors |
| title_full | High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors |
| title_fullStr | High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors |
| title_full_unstemmed | High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors |
| title_short | High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors |
| title_sort | high performance single crystalline diamond normally off field effect transistors |
| topic | Single crystalline diamond normally-off MOSFET |
| url | https://ieeexplore.ieee.org/document/8531777/ |
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