The Excellent Bending Limit of a Flexible Si-Based Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Capacitor with an Al Buffer Layer

The Excellent Bending Limit of a Flexible Si-Based Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Capacitor with an Al Buffer Layer

Flexible Si-based Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectric devices exhibit numerous advantages in the internet of things (IoT) and edge computing due to their low-power operation, superior scalability, excellent CMOS compatibility, and lig...

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Bibliographic Details
Main Authors: Xinyu Xie, Jiabin Qi, Hui Wang, Zongfang Liu, Wenhao Wu, Choonghyun Lee, Yi Zhao
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Electronics
Subjects:
bending limit
ferroelectric
Al buffer layer
Online Access:https://www.mdpi.com/2079-9292/13/1/24

Internet

https://www.mdpi.com/2079-9292/13/1/24

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