Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperatures

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperatures

In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiN<sub>x</sub> gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temper...

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Bibliographic Details
Main Authors: Dongsheng Zhao, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, Zijun Cheng
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
SiN<sub>x</sub>
AlGaN/GaN HEMT
hydrogen
interface trap
border trap
Online Access:https://www.mdpi.com/2072-666X/15/2/171

Internet

https://www.mdpi.com/2072-666X/15/2/171

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