Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p...

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Bibliographic Details
Main Authors: Guangnan Zhou, Yang Jiang, Gaiying Yang, Qing Wang, Mengya Fan, Lingli Jiang, Hongyu Yu, Guangrui Xia
Format: Article
Language:English
Published: AIP Publishing LLC 2021-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0044726

Internet

http://dx.doi.org/10.1063/5.0044726

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