Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface

High quality robust two-dimensional electron gas (2DEG) LaAlO3/SrTiO3 (LAO/STO) interfaces are produced using pulsed laser deposition and an acid-free substrate Ti-termination process, resulting in single unit cell terraces. Temperature dependent resistance measurements show two hysteresis anomalies...

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Bibliographic Details
Main Authors: S. Meaney, A. V. Pan, A. Jones, S. A. Fedoseev
Format: Article
Language:English
Published: AIP Publishing LLC 2019-10-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5112804