Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films

Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films

Abstract We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness...

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Bibliographic Details
Main Authors: Byoung Ki Choi, In Hak Lee, Jiho Kim, Young Jun Chang
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
WS2
Wetting property
Morphology control
Chemical vapor deposition
Raman spectroscopy
Transmission electron microscopy
Online Access:http://link.springer.com/article/10.1186/s11671-017-2030-z

Internet

http://link.springer.com/article/10.1186/s11671-017-2030-z

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