Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Low-temperature activation of oxide semiconductor materials such as In-Ga-Zn-O (IGZO) is a key approach for their utilization in flexible devices. We previously reported that the activation temperature can be reduced to 150 °C by hydrogen-doped IGZO (IGZO:H), demonstrating a strong potential of this...

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Bibliographic Details
Main Authors: Rostislav Velichko, Yusaku Magari, Mamoru Furuta
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
oxide semiconductors
hydrogen in In–Ga–Zn–O
defect passivation
oxygen diffusion
low-temperature activation
flexible electronics
Online Access:https://www.mdpi.com/1996-1944/15/1/334

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https://www.mdpi.com/1996-1944/15/1/334

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