Strong emission of THz radiation from GaAs microstructures on Si
Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5079668 |