Strong emission of THz radiation from GaAs microstructures on Si
Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is...
| Κύριοι συγγραφείς: | , , , , , , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
AIP Publishing LLC
2018-12-01
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| Σειρά: | AIP Advances |
| Διαθέσιμο Online: | http://dx.doi.org/10.1063/1.5079668 |