Density dependent local structures in InTe phase-change materials
Chalcogenide phase-change materials based random access memory (PCRAM) is one of the leading candidates for the development of non-volatile memory and neuro-inspired computing technologies. Recent work shows indium to be an important alloying element for PCRAM, while a thorough understanding of the...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0073400 |