Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO<sub>2</sub> Films

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO<sub>2</sub> Films

In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO<sub>2</sub>/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO<sub>2</sub> film was deposited through atomic layer deposition (ALD). Succe...

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Bibliographic Details
Main Authors: Chan-Hee Jang, Hyun-Seop Kim, Hyungtak Kim, Ho-Young Cha
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
ferroelectric
undoped HfO<sub>2</sub>
metal-ferroelectric-metal
temperature
frequency
atomic layer deposition
Online Access:https://www.mdpi.com/1996-1944/15/6/2097

Internet

https://www.mdpi.com/1996-1944/15/6/2097

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