Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles

Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles

Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from accelerated power‐cycling tests performed at predefined temperature st...

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Bibliographic Details
Main Authors: Magnar Hernes, Salvatore D'Arco, Antonios Antonopoulos, Dimosthenis Peftitsis
Format: Article
Language:English
Published: Wiley 2021-05-01
Series:IET Power Electronics
Subjects:
Reliability
Bipolar transistors
Power semiconductor devices
Insulated gate field effect transistors
Online Access:https://doi.org/10.1049/pel2.12083

Internet

https://doi.org/10.1049/pel2.12083

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