Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles
Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from accelerated power‐cycling tests performed at predefined temperature st...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2021-05-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12083 |
| _version_ | 1817977366459187200 |
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| author | Magnar Hernes Salvatore D'Arco Antonios Antonopoulos Dimosthenis Peftitsis |
| author_facet | Magnar Hernes Salvatore D'Arco Antonios Antonopoulos Dimosthenis Peftitsis |
| author_sort | Magnar Hernes |
| collection | DOAJ |
| description | Abstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from accelerated power‐cycling tests performed at predefined temperature stress conditions as, for example, with temperature swings above 60 °C. However, in real power converters applications, the power modules are usually stressed at temperature cycles not exceeding 40 °C. Thus, extrapolating the parameters of lifetime models developed using data from high‐temperature stress cycles experiments might result in erroneous lifetime estimations. This paper presents experimental results from power cycling tests on high‐power Insulated Gate Bipolar Transistors modules subjected to low temperature stress cycles of 30 and 40 °C. Therefore, devices experience still accelerated aging but with stress conditions much closer to the real application. Post‐mortem failure analysis has been performed on the modules reaching end‐of‐life in order to identify the failure mechanism. Finally, the number of cycles to end‐of‐life obtained experimentally is fit with a state‐of‐the‐art lifetime model to assess its validity at low temperature stress cycles. Challenges and limitations on data fitting to this lifetime model and the impact of various stress parameters on the anticipated failure are also presented. |
| first_indexed | 2024-04-13T22:15:26Z |
| format | Article |
| id | doaj.art-4daffe2afacd412495e9be96ad87d11c |
| institution | Directory Open Access Journal |
| issn | 1755-4535 1755-4543 |
| language | English |
| last_indexed | 2024-04-13T22:15:26Z |
| publishDate | 2021-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Power Electronics |
| spelling | doaj.art-4daffe2afacd412495e9be96ad87d11c2022-12-22T02:27:33ZengWileyIET Power Electronics1755-45351755-45432021-05-011471271128310.1049/pel2.12083Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cyclesMagnar Hernes0Salvatore D'Arco1Antonios Antonopoulos2Dimosthenis Peftitsis3SINTEF Energi AS Trondheim NorwaySINTEF Energi AS Trondheim NorwaySchool of Electrical and Computer Engineering National Technical University of Athens Iroon Polytechniou 9 Zografou GreeceDepartment of Electric Power Engineering Norwegian University of Science and Technology NTNU O.S. Bragstadsplass 2E Trondheim NorwayAbstract Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycles to end of life as a function of stress parameters. These models are normally developed based on experimental data from accelerated power‐cycling tests performed at predefined temperature stress conditions as, for example, with temperature swings above 60 °C. However, in real power converters applications, the power modules are usually stressed at temperature cycles not exceeding 40 °C. Thus, extrapolating the parameters of lifetime models developed using data from high‐temperature stress cycles experiments might result in erroneous lifetime estimations. This paper presents experimental results from power cycling tests on high‐power Insulated Gate Bipolar Transistors modules subjected to low temperature stress cycles of 30 and 40 °C. Therefore, devices experience still accelerated aging but with stress conditions much closer to the real application. Post‐mortem failure analysis has been performed on the modules reaching end‐of‐life in order to identify the failure mechanism. Finally, the number of cycles to end‐of‐life obtained experimentally is fit with a state‐of‐the‐art lifetime model to assess its validity at low temperature stress cycles. Challenges and limitations on data fitting to this lifetime model and the impact of various stress parameters on the anticipated failure are also presented.https://doi.org/10.1049/pel2.12083ReliabilityBipolar transistorsPower semiconductor devicesInsulated gate field effect transistors |
| spellingShingle | Magnar Hernes Salvatore D'Arco Antonios Antonopoulos Dimosthenis Peftitsis Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles IET Power Electronics Reliability Bipolar transistors Power semiconductor devices Insulated gate field effect transistors |
| title | Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles |
| title_full | Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles |
| title_fullStr | Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles |
| title_full_unstemmed | Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles |
| title_short | Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles |
| title_sort | failure analysis and lifetime assessment of igbt power modules at low temperature stress cycles |
| topic | Reliability Bipolar transistors Power semiconductor devices Insulated gate field effect transistors |
| url | https://doi.org/10.1049/pel2.12083 |
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