Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

This numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study pro...

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Bibliographic Details
Main Authors: Daniela Munteanu, Jean-Luc Autran
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Electronics
Subjects:
terrestrial cosmic rays
atmospheric neutrons
neutron–semiconductor interactions
silicon carbide
carbon-diamond
nuclear reactions
Online Access:https://www.mdpi.com/2079-9292/12/21/4468

Internet

https://www.mdpi.com/2079-9292/12/21/4468

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