Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation
This numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study pro...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/21/4468 |
| _version_ | 1797631993364611072 |
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| author | Daniela Munteanu Jean-Luc Autran |
| author_facet | Daniela Munteanu Jean-Luc Autran |
| author_sort | Daniela Munteanu |
| collection | DOAJ |
| description | This numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study provides an accurate investigation in terms of nuclear processes, recoil products, secondary ion production and fragment energy distributions. In addition, the thorough analysis includes a comparison between the responses to neutron irradiation of silicon carbide, carbon (diamond) and silicon targets. Finally, the consequences of these interactions in terms of the generation of electron–hole pairs, which is a fundamental mechanism underlying single-event transient effects at the device or circuit level, are discussed in detail. |
| first_indexed | 2024-03-11T11:31:34Z |
| format | Article |
| id | doaj.art-4dcc56beb892414f8c2c0ddbdab8b95f |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T11:31:34Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-4dcc56beb892414f8c2c0ddbdab8b95f2023-11-10T15:01:32ZengMDPI AGElectronics2079-92922023-10-011221446810.3390/electronics12214468Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron IrradiationDaniela Munteanu0Jean-Luc Autran1Aix-Marseille Univ, CNRS, IM2NP (UMR 7334), 13397 Marseille CEDEX 20, FranceAix-Marseille Univ, CNRS, IM2NP (UMR 7334), 13397 Marseille CEDEX 20, FranceThis numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study provides an accurate investigation in terms of nuclear processes, recoil products, secondary ion production and fragment energy distributions. In addition, the thorough analysis includes a comparison between the responses to neutron irradiation of silicon carbide, carbon (diamond) and silicon targets. Finally, the consequences of these interactions in terms of the generation of electron–hole pairs, which is a fundamental mechanism underlying single-event transient effects at the device or circuit level, are discussed in detail.https://www.mdpi.com/2079-9292/12/21/4468terrestrial cosmic raysatmospheric neutronsneutron–semiconductor interactionssilicon carbidecarbon-diamondnuclear reactions |
| spellingShingle | Daniela Munteanu Jean-Luc Autran Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation Electronics terrestrial cosmic rays atmospheric neutrons neutron–semiconductor interactions silicon carbide carbon-diamond nuclear reactions |
| title | Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation |
| title_full | Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation |
| title_fullStr | Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation |
| title_full_unstemmed | Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation |
| title_short | Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation |
| title_sort | basic mechanisms of single event occurrence in silicon carbide semiconductor under terrestrial atmospheric neutron irradiation |
| topic | terrestrial cosmic rays atmospheric neutrons neutron–semiconductor interactions silicon carbide carbon-diamond nuclear reactions |
| url | https://www.mdpi.com/2079-9292/12/21/4468 |
| work_keys_str_mv | AT danielamunteanu basicmechanismsofsingleeventoccurrenceinsiliconcarbidesemiconductorunderterrestrialatmosphericneutronirradiation AT jeanlucautran basicmechanismsofsingleeventoccurrenceinsiliconcarbidesemiconductorunderterrestrialatmosphericneutronirradiation |