Observation of weak localization in dual-gated bilayer MoS_{2}
We investigate the magnetoresistance of a dual-gated bilayer MoS_{2} encapsulated by hexagonal boron nitride. At low magnetic fields (|B|<0.5T), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free p...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2024-02-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.6.013216 |