Observation of weak localization in dual-gated bilayer MoS_{2}

Observation of weak localization in dual-gated bilayer MoS_{2}

We investigate the magnetoresistance of a dual-gated bilayer MoS_{2} encapsulated by hexagonal boron nitride. At low magnetic fields (|B|<0.5T), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free p...

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Bibliografische gegevens
Hoofdauteurs: Tingyu Qu, Michele Masseroni, Takashi Taniguchi, Kenji Watanabe, Barbaros Özyilmaz, Thomas Ihn, Klaus Ensslin
Formaat: Artikel
Taal:English
Gepubliceerd in: American Physical Society 2024-02-01
Reeks:Physical Review Research
Online toegang:http://doi.org/10.1103/PhysRevResearch.6.013216

Internet

http://doi.org/10.1103/PhysRevResearch.6.013216

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