Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated t...

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Bibliographic Details
Main Authors: Ke Chen, Anupam Roy, Amritesh Rai, Hema C. P. Movva, Xianghai Meng, Feng He, Sanjay K. Banerjee, Yaguo Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2018-05-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5022339

Internet

http://dx.doi.org/10.1063/1.5022339

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