Physics of Strongly-coupled Dopant-atoms in Nanodevices
In silicon nanoscale transistors, dopant atoms can significantly affect the transport characteristics, in particular at low temperatures. Investigation of coupling between neighboring dopants in such devices is essential in defining the properties for transport. In this work, we present an over...
| Hlavní autoři: | , , , , , , |
|---|---|
| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
Universitas Indonesia
2015-12-01
|
| Edice: | International Journal of Technology |
| Témata: | |
| On-line přístup: | http://ijtech.eng.ui.ac.id/article/view/1480 |