Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures

Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest...

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Bibliographic Details
Main Author: M. Akbari Eshkalak
Format: Article
Language:English
Published: Iran University of Science and Technology 2016-06-01
Series:Iranian Journal of Electrical and Electronic Engineering
Subjects:
GNRFET
Ambient Temperature
Non-Equilibrium Green’s Function (NEGF)
High frequency
Two-Dimensional FET model.
Online Access:http://ijeee.iust.ac.ir/browse.php?a_code=A-10-1625-4&slc_lang=en&sid=1

Internet

http://ijeee.iust.ac.ir/browse.php?a_code=A-10-1625-4&slc_lang=en&sid=1

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