Calculate the energy levels of vanadium V2+-grafted semiconductor GaAs using the theoretical orthogonal compliant model
To evaluate the energy level for Vanadium ion in GaAs: V2+ the ground term has determined (4F). Using the concepts of isomorphism on orbital states for the ground term of GaAs: V2+ where the states are described by fictitious orbits of L'=0, T=1/2 & L'=1, the matrix elements for spin H...
| Main Authors: | , |
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| Format: | Article |
| Language: | Arabic |
| Published: |
College of Education for Pure Sciences
2006-01-01
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| Series: | مجلة التربية والعلم |
| Subjects: | |
| Online Access: | https://edusj.mosuljournals.com/article_162866_30bc71d8e593638d5ffe89bfc7aec7f4.pdf |