A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Abstract Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the stochastic oxygen vacancy generation/r...

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Bibliographic Details
Main Authors: Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King
Format: Article
Language:English
Published: SpringerOpen 2018-07-01
Series:Nanoscale Research Letters
Subjects:
RRAM
Variability
Stochastic model
Monte Carlo simulation
Trap-assisted tunneling
Online Access:http://link.springer.com/article/10.1186/s11671-018-2619-x

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http://link.springer.com/article/10.1186/s11671-018-2619-x

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