The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy

The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy

The large anomalous Hall effect (AHE) in antiferromagnetic(AFM) Weyl semimetal Mn3Sn attracts intensive attentions in spintronics. Here, we report the structural property of high quality Mn3Sn thin film on insulator substrate MgO(110) by molecular beam epitaxy (MBE), and AHE in control of residual m...

Full description

Bibliographic Details
Main Authors: Jiahui Liu, Zhen Zhang, Maoxiang Fu, Xiaonan Zhao, Ronghuan Xie, Qiang Cao, Lihui Bai, Shishou Kang, Yanxue Chen, Shishen Yan, Liangmo Mei, Guolei Liu
Format: Article
Language:English
Published: Elsevier 2023-09-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S221137972300596X

Internet

http://www.sciencedirect.com/science/article/pii/S221137972300596X

Similar Items