The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy
The large anomalous Hall effect (AHE) in antiferromagnetic(AFM) Weyl semimetal Mn3Sn attracts intensive attentions in spintronics. Here, we report the structural property of high quality Mn3Sn thin film on insulator substrate MgO(110) by molecular beam epitaxy (MBE), and AHE in control of residual m...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-09-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137972300596X |
| _version_ | 1797682863524544512 |
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| author | Jiahui Liu Zhen Zhang Maoxiang Fu Xiaonan Zhao Ronghuan Xie Qiang Cao Lihui Bai Shishou Kang Yanxue Chen Shishen Yan Liangmo Mei Guolei Liu |
| author_facet | Jiahui Liu Zhen Zhang Maoxiang Fu Xiaonan Zhao Ronghuan Xie Qiang Cao Lihui Bai Shishou Kang Yanxue Chen Shishen Yan Liangmo Mei Guolei Liu |
| author_sort | Jiahui Liu |
| collection | DOAJ |
| description | The large anomalous Hall effect (AHE) in antiferromagnetic(AFM) Weyl semimetal Mn3Sn attracts intensive attentions in spintronics. Here, we report the structural property of high quality Mn3Sn thin film on insulator substrate MgO(110) by molecular beam epitaxy (MBE), and AHE in control of residual mismatch strain between Mn3Sn film and substrate. We are able to grow strain-free Mn3Sn(10 1¯ 0) films or alternatively strained Mn3Sn(11 2¯ 0) films via a three-step process. The strain-free Mn3Sn film has large anomalous Hall conductivity up to 30 Ω-1cm−1 at room temperature, which is comparable to bulk Mn3Sn. In contrast, AHE is switched off in strained Mn3Sn film due to piezomagnetic effect under a uniaxial compress strain of ∼2.0%. These findings provide a deeper understanding on AFM spintronic applications. |
| first_indexed | 2024-03-12T00:06:04Z |
| format | Article |
| id | doaj.art-4ee6761267a7468b8ac20a14644acdad |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-12T00:06:04Z |
| publishDate | 2023-09-01 |
| publisher | Elsevier |
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| series | Results in Physics |
| spelling | doaj.art-4ee6761267a7468b8ac20a14644acdad2023-09-17T04:56:17ZengElsevierResults in Physics2211-37972023-09-0152106803The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxyJiahui Liu0Zhen Zhang1Maoxiang Fu2Xiaonan Zhao3Ronghuan Xie4Qiang Cao5Lihui Bai6Shishou Kang7Yanxue Chen8Shishen Yan9Liangmo Mei10Guolei Liu11School of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSpintronics Institute, University of Jinan, Jinan 250022, ChinaSpintronics Institute, University of Jinan, Jinan 250022, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, China; Spintronics Institute, University of Jinan, Jinan 250022, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, China; Corresponding author.The large anomalous Hall effect (AHE) in antiferromagnetic(AFM) Weyl semimetal Mn3Sn attracts intensive attentions in spintronics. Here, we report the structural property of high quality Mn3Sn thin film on insulator substrate MgO(110) by molecular beam epitaxy (MBE), and AHE in control of residual mismatch strain between Mn3Sn film and substrate. We are able to grow strain-free Mn3Sn(10 1¯ 0) films or alternatively strained Mn3Sn(11 2¯ 0) films via a three-step process. The strain-free Mn3Sn film has large anomalous Hall conductivity up to 30 Ω-1cm−1 at room temperature, which is comparable to bulk Mn3Sn. In contrast, AHE is switched off in strained Mn3Sn film due to piezomagnetic effect under a uniaxial compress strain of ∼2.0%. These findings provide a deeper understanding on AFM spintronic applications.http://www.sciencedirect.com/science/article/pii/S221137972300596X |
| spellingShingle | Jiahui Liu Zhen Zhang Maoxiang Fu Xiaonan Zhao Ronghuan Xie Qiang Cao Lihui Bai Shishou Kang Yanxue Chen Shishen Yan Liangmo Mei Guolei Liu The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy Results in Physics |
| title | The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy |
| title_full | The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy |
| title_fullStr | The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy |
| title_full_unstemmed | The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy |
| title_short | The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy |
| title_sort | anomalous hall effect controlled by residual epitaxial strain in antiferromagnetic weyl semimetal mn3sn thin films grown by molecular beam epitaxy |
| url | http://www.sciencedirect.com/science/article/pii/S221137972300596X |
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