Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices
High-density memories and high-speed CPUs are usually realized by reduction of the size of semiconductor cells in Large Scale Integrations (LSIs). Representative length scale of Ultra Large Scale Integration (ULSI) cells is going to be in nano-meter order. Dislocation accumulation during the product...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Japanese |
| Published: |
The Japan Society of Mechanical Engineers
2020-04-01
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| Series: | Nihon Kikai Gakkai ronbunshu |
| Subjects: | |
| Online Access: | https://www.jstage.jst.go.jp/article/transjsme/86/884/86_19-00457/_pdf/-char/en |
| _version_ | 1811220909335248896 |
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| author | Michihiro SATO Tetsuya OHASHI Yoshiki KAWANO |
| author_facet | Michihiro SATO Tetsuya OHASHI Yoshiki KAWANO |
| author_sort | Michihiro SATO |
| collection | DOAJ |
| description | High-density memories and high-speed CPUs are usually realized by reduction of the size of semiconductor cells in Large Scale Integrations (LSIs). Representative length scale of Ultra Large Scale Integration (ULSI) cells is going to be in nano-meter order. Dislocation accumulation during the production process in the electron channel of semiconductor device is one of the most serious problems. Dislocation accumulation has an enormous effect on the electronic state of the device. Therefore, the evaluation and suppression of dislocation accumulation are crucially important for the design and development of semiconductor device structure. In this study, we numerically analyze the suppression of dislocation accumulation in the shallow trench isolation type ULSI cells. Accumulation of dislocations is analyzed by employing a technique of crystal plasticity analysis and we evaluate the dislocation density distribution and total length of dislocations in the silicon substrate. Possibilities for the suppression of dislocation accumulation are discussed. |
| first_indexed | 2024-04-12T07:51:03Z |
| format | Article |
| id | doaj.art-4eef4ae9726c4258ae852d5009b8409c |
| institution | Directory Open Access Journal |
| issn | 2187-9761 |
| language | Japanese |
| last_indexed | 2024-04-12T07:51:03Z |
| publishDate | 2020-04-01 |
| publisher | The Japan Society of Mechanical Engineers |
| record_format | Article |
| series | Nihon Kikai Gakkai ronbunshu |
| spelling | doaj.art-4eef4ae9726c4258ae852d5009b8409c2022-12-22T03:41:36ZjpnThe Japan Society of Mechanical EngineersNihon Kikai Gakkai ronbunshu2187-97612020-04-018688419-0045719-0045710.1299/transjsme.19-00457transjsmeCrystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devicesMichihiro SATO0Tetsuya OHASHI1Yoshiki KAWANO2Department of Mechanical Engineering, Kitami Institute of TechnologyDepartment of Mechanical Engineering, Kitami Institute of TechnologyDepartment of Mechanical Engineering, Kitami Institute of TechnologyHigh-density memories and high-speed CPUs are usually realized by reduction of the size of semiconductor cells in Large Scale Integrations (LSIs). Representative length scale of Ultra Large Scale Integration (ULSI) cells is going to be in nano-meter order. Dislocation accumulation during the production process in the electron channel of semiconductor device is one of the most serious problems. Dislocation accumulation has an enormous effect on the electronic state of the device. Therefore, the evaluation and suppression of dislocation accumulation are crucially important for the design and development of semiconductor device structure. In this study, we numerically analyze the suppression of dislocation accumulation in the shallow trench isolation type ULSI cells. Accumulation of dislocations is analyzed by employing a technique of crystal plasticity analysis and we evaluate the dislocation density distribution and total length of dislocations in the silicon substrate. Possibilities for the suppression of dislocation accumulation are discussed.https://www.jstage.jst.go.jp/article/transjsme/86/884/86_19-00457/_pdf/-char/enulsishallow trench isolationdislocationcrystal plasticity analysis |
| spellingShingle | Michihiro SATO Tetsuya OHASHI Yoshiki KAWANO Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices Nihon Kikai Gakkai ronbunshu ulsi shallow trench isolation dislocation crystal plasticity analysis |
| title | Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices |
| title_full | Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices |
| title_fullStr | Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices |
| title_full_unstemmed | Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices |
| title_short | Crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices |
| title_sort | crystal plasticity analysis of the suppression of dislocation accumulation during the production process of semiconductor devices |
| topic | ulsi shallow trench isolation dislocation crystal plasticity analysis |
| url | https://www.jstage.jst.go.jp/article/transjsme/86/884/86_19-00457/_pdf/-char/en |
| work_keys_str_mv | AT michihirosato crystalplasticityanalysisofthesuppressionofdislocationaccumulationduringtheproductionprocessofsemiconductordevices AT tetsuyaohashi crystalplasticityanalysisofthesuppressionofdislocationaccumulationduringtheproductionprocessofsemiconductordevices AT yoshikikawano crystalplasticityanalysisofthesuppressionofdislocationaccumulationduringtheproductionprocessofsemiconductordevices |