N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning

Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectric. A favourable trade‐off between gate fringing capacit...

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Bibliographic Details
Main Authors: Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Format: Article
Language:English
Published: Wiley 2024-07-01
Series:Electronics Letters
Subjects:
gallium compounds
high electron mobility transistors
III‐V semiconductors
millimetre wave field effect transistors
power amplifiers
wide band gap semiconductors
Online Access:https://doi.org/10.1049/ell2.13272

Internet

https://doi.org/10.1049/ell2.13272

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