Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS) to lower the breakdown voltage of conventional impact ionization MOS (IMOS) and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization...

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Bibliographic Details
Main Authors: Sangeeta Singh, P.N. Kondekar
Format: Article
Language:English
Published: Elsevier 2016-03-01
Series:Engineering Science and Technology, an International Journal
Subjects:
Impact ionization
Schottky barrier tunneling
Wentzel–Kramers–Brillouin (WKB) approximation
Ionization integral (M)
Subthreshold swing (SS)
Online Access:http://www.sciencedirect.com/science/article/pii/S2215098615001202

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http://www.sciencedirect.com/science/article/pii/S2215098615001202

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