Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

Highlights Incorporation of Schottky Junction increases the pseudocapacitive mechanism at higher current rate. The pseudocapacitance behavior of the positive and negative electrodes is balanced to construct a solid-state supercapattery device. An energy density of 236.14 Wh kg−1 is achieved for soli...

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Bibliographic Details
Main Authors: Selvaraj Seenivasan, Kyu In Shim, Chaesung Lim, Thangavel Kavinkumar, Amarnath T. Sivagurunathan, Jeong Woo Han, Do-Heyoung Kim
Format: Article
Language:English
Published: SpringerOpen 2023-03-01
Series:Nano-Micro Letters
Subjects:
Pseudo-capacitance
Negative electrode
Supercapattery
Atomic layer deposition
Energy density
Online Access:https://doi.org/10.1007/s40820-023-01016-6

Internet

https://doi.org/10.1007/s40820-023-01016-6

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