Ab initio calculation of silicon monovacancy defect in amorphous-SiO2/Si interface

Defects significantly influence the electrical properties of semiconductors and their interfaces. The migration barriers and electrical properties of silicon monovacancy defect in an amorphous-SiO2/Si (a-SiO2/Si) interface are studied in this work. The minimum energy path and kinetics of monovacancy...

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Bibliografski detalji
Glavni autori: Pei Yao, Yu Song, Pei Li, Xu Zuo
Format: Članak
Jezik:English
Izdano: AIP Publishing LLC 2022-05-01
Serija:AIP Advances
Online pristup:http://dx.doi.org/10.1063/5.0088197