Ab initio calculation of silicon monovacancy defect in amorphous-SiO2/Si interface
Defects significantly influence the electrical properties of semiconductors and their interfaces. The migration barriers and electrical properties of silicon monovacancy defect in an amorphous-SiO2/Si (a-SiO2/Si) interface are studied in this work. The minimum energy path and kinetics of monovacancy...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0088197 |