Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measu...

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Bibliographic Details
Main Authors: Tim Kolbe, Arne Knauer, Jens Rass, Hyun Kyong Cho, Sylvia Hagedorn, Sven Einfeldt, Michael Kneissl, Markus Weyers
Format: Article
Language:English
Published: MDPI AG 2017-12-01
Series:Materials
Subjects:
light emitting diode
LED
ultraviolet
UV
electron blocking layer
EBL
MOVPE
doping
simulation
heterostructure
Online Access:https://www.mdpi.com/1996-1944/10/12/1396

Internet

https://www.mdpi.com/1996-1944/10/12/1396

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