Gallium Phosphide IMPATT Sources for Millimeter-Wave Applications
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method h...
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| Format: | Article |
| Language: | English |
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Iran University of Science and Technology
2018-06-01
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| Series: | Iranian Journal of Electrical and Electronic Engineering |
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| Online Access: | http://ijeee.iust.ac.ir/browse.php?a_code=A-10-428-3&slc_lang=en&sid=1 |