Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure

In this work, the resistive switching behavior of bilayer ZnO/Al<sub>2</sub>O<sub>3</sub>-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffus...

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Bibliographic Details
Main Authors: Chandreswar Mahata, Jongmin Park, Muhammad Ismail, Dae Hwan Kim, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Materials
Subjects:
ZnO/Al<sub>2</sub>O<sub>3</sub> bilayer
resistive switching
low-power
synaptic plasticity
short-term plasticity
long-term potentiation
Online Access:https://www.mdpi.com/1996-1944/15/19/6663

Internet

https://www.mdpi.com/1996-1944/15/19/6663

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