Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure
In this work, the resistive switching behavior of bilayer ZnO/Al<sub>2</sub>O<sub>3</sub>-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffus...
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2022-09-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/19/6663 |
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| author | Chandreswar Mahata Jongmin Park Muhammad Ismail Dae Hwan Kim Sungjun Kim |
| author_facet | Chandreswar Mahata Jongmin Park Muhammad Ismail Dae Hwan Kim Sungjun Kim |
| author_sort | Chandreswar Mahata |
| collection | DOAJ |
| description | In this work, the resistive switching behavior of bilayer ZnO/Al<sub>2</sub>O<sub>3</sub>-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffusion. Multilevel resistance states were modulated under DC bias by varying the current compliance from 0.1 mA to 0.8 mA, the SET operations where the low resistance state of the memristor device was reduced from 25 kΩ to 2.4 kΩ. The presence of Al<sub>2</sub>O<sub>3</sub> acts as a redox layer and facilitates oxygen vacancy exchange that demonstrates stable gradual conductance change. Stepwise disruption of conductive filaments was monitored depending on the slow DC voltage sweep rate. This is attributed to the atomic scale modulation of oxygen vacancies with four distinct reproducible quantized conductance states, which shows multilevel data storage capability. Moreover, several crucial synaptic properties such as potentiation/depression under identical presynaptic pulses and the spike-rate-dependent plasticity were implemented on ITO/ZnO/Al<sub>2</sub>O<sub>3</sub>/TaN memristor. The postsynaptic current change was monitored defining the long-term potentiation by increasing the presynaptic stimulus frequency from 5 Hz to 100 Hz. Moreover, the repetitive pulse voltage stimulation transformed the short-term plasticity to long-term plasticity during spike-number-dependent plasticity. |
| first_indexed | 2024-03-09T21:31:20Z |
| format | Article |
| id | doaj.art-4f5fed57cf104501aff0caaba96c6f7c |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T21:31:20Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-4f5fed57cf104501aff0caaba96c6f7c2023-11-23T20:54:37ZengMDPI AGMaterials1996-19442022-09-011519666310.3390/ma15196663Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer StructureChandreswar Mahata0Jongmin Park1Muhammad Ismail2Dae Hwan Kim3Sungjun Kim4Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaSchool of Electrical Engineering, Kookmin University, Seoul 02707, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaIn this work, the resistive switching behavior of bilayer ZnO/Al<sub>2</sub>O<sub>3</sub>-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffusion. Multilevel resistance states were modulated under DC bias by varying the current compliance from 0.1 mA to 0.8 mA, the SET operations where the low resistance state of the memristor device was reduced from 25 kΩ to 2.4 kΩ. The presence of Al<sub>2</sub>O<sub>3</sub> acts as a redox layer and facilitates oxygen vacancy exchange that demonstrates stable gradual conductance change. Stepwise disruption of conductive filaments was monitored depending on the slow DC voltage sweep rate. This is attributed to the atomic scale modulation of oxygen vacancies with four distinct reproducible quantized conductance states, which shows multilevel data storage capability. Moreover, several crucial synaptic properties such as potentiation/depression under identical presynaptic pulses and the spike-rate-dependent plasticity were implemented on ITO/ZnO/Al<sub>2</sub>O<sub>3</sub>/TaN memristor. The postsynaptic current change was monitored defining the long-term potentiation by increasing the presynaptic stimulus frequency from 5 Hz to 100 Hz. Moreover, the repetitive pulse voltage stimulation transformed the short-term plasticity to long-term plasticity during spike-number-dependent plasticity.https://www.mdpi.com/1996-1944/15/19/6663ZnO/Al<sub>2</sub>O<sub>3</sub> bilayerresistive switchinglow-powersynaptic plasticityshort-term plasticitylong-term potentiation |
| spellingShingle | Chandreswar Mahata Jongmin Park Muhammad Ismail Dae Hwan Kim Sungjun Kim Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure Materials ZnO/Al<sub>2</sub>O<sub>3</sub> bilayer resistive switching low-power synaptic plasticity short-term plasticity long-term potentiation |
| title | Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure |
| title_full | Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure |
| title_fullStr | Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure |
| title_full_unstemmed | Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure |
| title_short | Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al<sub>2</sub>O<sub>3</sub> Bilayer Structure |
| title_sort | improved resistive switching with low power synaptic behaviors of zno al sub 2 sub o sub 3 sub bilayer structure |
| topic | ZnO/Al<sub>2</sub>O<sub>3</sub> bilayer resistive switching low-power synaptic plasticity short-term plasticity long-term potentiation |
| url | https://www.mdpi.com/1996-1944/15/19/6663 |
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