A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage

A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage

We experimentally demonstrate a new type of silicon-based capacitorless one-transistor dynamic random access memory (1T-DRAM) with an electron-bridge channel. The fabrication steps are fully compatible with modern CMOS technology. An underlap device structure is exploited and positive charges are pr...

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Bibliographic Details
Main Authors: Jyi-Tsong Lin, Wei-Han Lee, Po-Hsieh Lin, Steve W. Haga, Yun-Ru Chen, Abhinav Kranti
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Capacitorless 1T-DRAM
silicon-on-insulator technology
electron-bridge
Online Access:https://ieeexplore.ieee.org/document/7762150/

Internet

https://ieeexplore.ieee.org/document/7762150/

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