Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor
Abstract In this study, an isotropic etching process of SiO2 selective to Si3N4 using NF3/H2/methanol chemistry was investigated. HF was formed using a NF3/H2 remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base material, methanol was injected outside th...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-38359-4 |