Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms
The energy bandgap of photoluminescence porous silicon is calculatedbased on the analysis of the current-voltage characteristics and themeasurements of the thermal activation energy of the zero bias and reversebias currents of PS/n-Si porous silicon diodes at different temperatures. The2.1 eV bandga...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2007-12-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_25978_982d818b12bd4aff1be2fca25ed4534c.pdf |