Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms
The energy bandgap of photoluminescence porous silicon is calculatedbased on the analysis of the current-voltage characteristics and themeasurements of the thermal activation energy of the zero bias and reversebias currents of PS/n-Si porous silicon diodes at different temperatures. The2.1 eV bandga...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2007-12-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_25978_982d818b12bd4aff1be2fca25ed4534c.pdf |
| _version_ | 1797325118458822656 |
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| author | Alwan M.Alwan |
| author_facet | Alwan M.Alwan |
| author_sort | Alwan M.Alwan |
| collection | DOAJ |
| description | The energy bandgap of photoluminescence porous silicon is calculatedbased on the analysis of the current-voltage characteristics and themeasurements of the thermal activation energy of the zero bias and reversebias currents of PS/n-Si porous silicon diodes at different temperatures. The2.1 eV bandgap resulting from these electrical measurements agrees well with2 eV measured in PL spectra. |
| first_indexed | 2024-03-08T06:05:25Z |
| format | Article |
| id | doaj.art-4fd4f3f11c8d44868b1d6dad2c0a69e0 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:05:25Z |
| publishDate | 2007-12-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-4fd4f3f11c8d44868b1d6dad2c0a69e02024-02-04T17:54:18ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582007-12-0125101143114810.30684/etj.25.10.425978Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport MechanismsAlwan M.AlwanThe energy bandgap of photoluminescence porous silicon is calculatedbased on the analysis of the current-voltage characteristics and themeasurements of the thermal activation energy of the zero bias and reversebias currents of PS/n-Si porous silicon diodes at different temperatures. The2.1 eV bandgap resulting from these electrical measurements agrees well with2 eV measured in PL spectra.https://etj.uotechnology.edu.iq/article_25978_982d818b12bd4aff1be2fca25ed4534c.pdf |
| spellingShingle | Alwan M.Alwan Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms Engineering and Technology Journal |
| title | Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms |
| title_full | Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms |
| title_fullStr | Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms |
| title_full_unstemmed | Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms |
| title_short | Calculation of Energy Band gap of Porous Silicon Based On The Carrier Transport Mechanisms |
| title_sort | calculation of energy band gap of porous silicon based on the carrier transport mechanisms |
| url | https://etj.uotechnology.edu.iq/article_25978_982d818b12bd4aff1be2fca25ed4534c.pdf |
| work_keys_str_mv | AT alwanmalwan calculationofenergybandgapofporoussiliconbasedonthecarriertransportmechanisms |