SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

Abstract SnSe2 field-effect transistor was fabricated based on exfoliated few-layered SnSe2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe2 FET can achieve an on/off ratio as high as ~ 104 within 1 V...

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Bibliographic Details
Main Authors: Hong Xu, Jie Xing, Yuan Huang, Chen Ge, Jinghao Lu, Xu Han, Jianyu Du, Huiying Hao, Jingjing Dong, Hao Liu
Format: Article
Language:English
Published: SpringerOpen 2019-01-01
Series:Nanoscale Research Letters
Subjects:
Field-effect transistor
SnSe2
Photoconductivity
On/off ratio
Online Access:http://link.springer.com/article/10.1186/s11671-019-2850-0

Internet

http://link.springer.com/article/10.1186/s11671-019-2850-0

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