SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity
Abstract SnSe2 field-effect transistor was fabricated based on exfoliated few-layered SnSe2 flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe2 FET can achieve an on/off ratio as high as ~ 104 within 1 V...
Main Authors: | Hong Xu, Jie Xing, Yuan Huang, Chen Ge, Jinghao Lu, Xu Han, Jianyu Du, Huiying Hao, Jingjing Dong, Hao Liu |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2019-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-019-2850-0 |
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