Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chambe...

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Bibliographic Details
Main Authors: Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, Marco Mauceri, Francesco La Via
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Materials
Subjects:
photoluminescence
Raman scattering
3C-SiC
hetero-epitaxy
staking faults
Online Access:https://www.mdpi.com/1996-1944/13/8/1837

Internet

https://www.mdpi.com/1996-1944/13/8/1837

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