Interfacial passivation of CsPbI3 quantum dots improves the performance of hole-transport-layer-free perovskite photodetectors

Interfacial passivation of CsPbI3 quantum dots improves the performance of hole-transport-layer-free perovskite photodetectors

Abstract Photodetectors (PDs) suffer from dark current due to defects in the perovskite photosensitive layer. Contact between the photosensitive layer and carbon electrodes could result in recombination of carriers at the interface. In this work, CsPbI3 quantum dots (QDs) were added between the phot...

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Bibliographic Details
Main Authors: Houpu Zhou, Mengwei Chen, Chenguang Liu, Rui Zhang, Jing Li, Sainan Liao, Haifei Lu, Yingping Yang
Format: Article
Language:English
Published: SpringerOpen 2023-02-01
Series:Nanoscale Research Letters
Subjects:
Perovskite photodetectors
CsPbI3 quantum dot
Interface passivation
Energy level matching
Online Access:https://doi.org/10.1186/s11671-023-03793-w

Internet

https://doi.org/10.1186/s11671-023-03793-w

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