Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal...

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Detalles Bibliográficos
Autores principales: Tongyao Han, Yifei Luo, Binli Liu, Xiao Ma, Feng Xie
Formato: Artículo
Lenguaje:English
Publicado: MDPI AG 2022-10-01
Colección:Energies
Materias:
IGBT
multi-timescale
distributed heat source
chip vertical path
temperature distribution
Acceso en línea:https://www.mdpi.com/1996-1073/15/19/7393

Internet

https://www.mdpi.com/1996-1073/15/19/7393

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