Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Short-Duration Transient Temperature Distribution Prediction Model along Chip Vertical Path Applicable to Multi-Timescale Simulation

Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal...

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Bibliographic Details
Main Authors: Tongyao Han, Yifei Luo, Binli Liu, Xiao Ma, Feng Xie
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Energies
Subjects:
IGBT
multi-timescale
distributed heat source
chip vertical path
temperature distribution
Online Access:https://www.mdpi.com/1996-1073/15/19/7393

Internet

https://www.mdpi.com/1996-1073/15/19/7393

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