GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric di...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/1/134 |